Dec 14, 2017, 2:14
Samsung launches new 512 GB eUFS memory chips for mobile devices
Despite the increased number of layers, it still have the same size as the company's previous 48-layer V-NAND 256GB solution. It also boasts a random read speed of 42,000 IOPS (input/output operations per second) and a write speed of 40,000 IOPS.
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