Dec 14, 2017, 2:14
Samsung launches new 512 GB eUFS memory chips for mobile devices
Despite the increased number of layers, it still have the same size as the company's previous 48-layer V-NAND 256GB solution. It also boasts a random read speed of 42,000 IOPS (input/output operations per second) and a write speed of 40,000 IOPS.
Tales of Vesperia Remaster to Release This Winter
Microsoft doubles number of game studios, teases new Halo
Halo Infinite Announced For Xbox One, Developed By 343 Industries
Facebook glitch shared 14 million users' private posts publicly
Destiny 2 Details Annual Pass for Future Content Releases